查詢教學大綱與進度

教學大綱與進度

課程基本資料：

學年期課號課程名稱階段學分時數修教師班級人撤備註

112-2 331156 矽奈米元件物理 1 3.0 3 ★ 徐曉萱材資四甲
材資三甲 24 1 材資四甲和材料所合開

學年期	課號	課程名稱	階段	學分	時數	修	教師	班級	人	撤	備註
112-2	331156	矽奈米元件物理	1	3.0	3	★	徐曉萱	材資四甲材資三甲	24	1	材資四甲和材料所合開

教學大綱與進度：

教師姓名徐曉萱　教師諮商時間(Office Hours)

Email hhhsu@mail.ntut.edu.tw

最後更新時間 2024-05-16 00:31:40

課程大綱本課程介紹現代矽奈米之元件物理與其操作原理，課程主題涵蓋金屬/半導體接面、能帶圖、金氧半電容元件、金氧半場效電晶體、金氧半場效電晶體之微縮、先進金氧半場效電晶體與其製程技術。 This course provides an introduction to the fundamental physics and operation principles of silicon-based nano devices in modern electronics. This class will cover topics include metal/semiconductor junctions, energy band diagrams, MOS capacitors, MOS field-effect transistors (MOSFETs). MOSFET scaling, modern MOSFETs, and future transistor technologies will also be discussed.(Course taught in English)

課程進度 1. P-N junction and P-N diode 2.Metal-Semiconductor Contacts and Schottky Diodes 3. MOS Capacitors 4. Fundamentals of MOSFET 5. Nonideal MOS 6. MOSFETs in ICs--scaling, leakage, and other topics 7. Modern FET devices and Semiconductor Processing

評量方式與標準 Midterm Exam: 40% Final Exam: 40 % Class Participation: 20% (Homework, Classwork, Attendance)

使用教材、參考書目或其他 【遵守智慧財產權觀念，請使用正版教科書，不得使用非法影印教科書】

使用外文原文書：是
1.Fundamentals of Modern VLSI Devices, Yuan Taur and TaK H. Ning, ISBN：9781107635715 2.Semiconductor Physics and Devices:Basic Principles, 4e, Donald A. Neamen, ISBN：9780073529585 3.Lecture notes/handouts

課程諮詢管道 Contact email: hhhsu@mail.ntut.edu.tw

課程對應SDGs指標

備註
1. Classes are given virtually via Google Meeting. (Class link will be announced in the Line group)
2. Classes are given virtually via Microsoft Teams if an epidemic happens. 使用 Microsoft Team 提供之課程連結 (學號@cc.ntut.edu.tw，密碼同nportal入口網頁密碼。)

教師姓名	徐曉萱　教師諮商時間(Office Hours)
Email	hhhsu@mail.ntut.edu.tw
最後更新時間	2024-05-16 00:31:40
課程大綱	本課程介紹現代矽奈米之元件物理與其操作原理，課程主題涵蓋金屬/半導體接面、能帶圖、金氧半電容元件、金氧半場效電晶體、金氧半場效電晶體之微縮、先進金氧半場效電晶體與其製程技術。 This course provides an introduction to the fundamental physics and operation principles of silicon-based nano devices in modern electronics. This class will cover topics include metal/semiconductor junctions, energy band diagrams, MOS capacitors, MOS field-effect transistors (MOSFETs). MOSFET scaling, modern MOSFETs, and future transistor technologies will also be discussed.(Course taught in English)
課程進度	1. P-N junction and P-N diode 2.Metal-Semiconductor Contacts and Schottky Diodes 3. MOS Capacitors 4. Fundamentals of MOSFET 5. Nonideal MOS 6. MOSFETs in ICs--scaling, leakage, and other topics 7. Modern FET devices and Semiconductor Processing
評量方式與標準	Midterm Exam: 40% Final Exam: 40 % Class Participation: 20% (Homework, Classwork, Attendance)
使用教材、參考書目或其他	【遵守智慧財產權觀念，請使用正版教科書，不得使用非法影印教科書】使用外文原文書：是 1.Fundamentals of Modern VLSI Devices, Yuan Taur and TaK H. Ning, ISBN：9781107635715 2.Semiconductor Physics and Devices:Basic Principles, 4e, Donald A. Neamen, ISBN：9780073529585 3.Lecture notes/handouts
課程諮詢管道	Contact email: hhhsu@mail.ntut.edu.tw
課程對應SDGs指標
備註	1. Classes are given virtually via Google Meeting. (Class link will be announced in the Line group) 2. Classes are given virtually via Microsoft Teams if an epidemic happens. 使用 Microsoft Team 提供之課程連結 (學號@cc.ntut.edu.tw，密碼同nportal入口網頁密碼。)