教學大綱與進度

課程基本資料：

學年期	課號	課程名稱	階段	學分	時數	修	教師	班級	人	撤	備註
114-1	350125	光電半導體製造	1	3.0	3	★	王子建	光電所	15	0

教學大綱與進度：

教師姓名	王子建　教師諮商時間(Office Hours)
Email	f10939@ntut.edu.tw
最後更新時間	2025-05-26 16:00:47
課程大綱	Material properties (Si and GaAs), Crystal growth, Crystal Doping, Epitaxy (MBE, VPE, LPE), Film deposition (thermal evaporation, e-gun, sputtering), Thermal diffusion, Ion implantation
課程進度	Week 1 - course introduction Week 2 - material properties (Si and GaAs): crystal structure, orientation effect Week 3 - material defects and their electronic properties Week 4 - crystal growth technique Week 5 - crystal doping technique Week 6 - zone process Week 7 - epitaxy theory Week 8 - MBE, VPE(1/2) Week 9 - midterm report Week 10 - VPE (2/2), LPE Week 11 - film deposition Week 12 - film characteristics (1/2) Week 13 - film characteristics (2/2) Week 14 - diffusion (1/2) Week 15 - diffusion (2/2) Week 16 - implantation (1/2) Week 17 - implantation (2/2) Week 18 - final exam
評量方式與標準	midterm report 40% final exam 40% homework and regular assessment 20%
使用教材、參考書目或其他	【遵守智慧財產權觀念，請使用正版教科書，不得使用非法影印教科書】 使用外文原文書：是 1. Sorab K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Wiley Interscience. 2. V. Swaminathan and A. T. Macrander, Materials Aspects of GaAs and InP Base Structure, Prentice Hall. 3. Ralph Williams, Modern GaAs Processing Methods, Artech House
課程諮詢管道	Email: f10939@ntut.edu.tw Office hour: Monday: 2:00 pm -6:00 pm
課程對應SDGs指標	SDG9：產業創新與基礎設施（Industry, Innovation and Infrastructure）
課程是否導入AI	● 鼓勵學生使用生成式AI工具（Encourage students to use generative AI tools）
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