Course Syllabus

Course Information：

Year-Semester Course Number Course Name Phase Credits Hours Required/Elective Instructor Class Student NO. Withdraw Note

Fall Semester
Year 2025 350125 Fabrication of Potoelectronic Materials and Device 1 3.0 3 ★ Wang,tzyy-jiann GEOE 5 0 　

Year-Semester	Course Number	Course Name	Phase	Credits	Hours	Required/Elective	Instructor	Class	Student NO.	Withdraw	Note
Fall Semester Year 2025	350125	Fabrication of Potoelectronic Materials and Device	1	3.0	3	★	Wang,tzyy-jiann	GEOE	5	0

Course Plan：

Instructor Wang,tzyy-jiann　Office Hours

Email f10939@ntut.edu.tw

Last Updated 2025-05-26 16:00:47

Course Objective Material properties (Si and GaAs), Crystal growth, Crystal Doping, Epitaxy (MBE, VPE, LPE), Film deposition (thermal evaporation, e-gun, sputtering), Thermal diffusion, Ion implantation

Course Schedule Week 1 - course introduction Week 2 - material properties (Si and GaAs): crystal structure, orientation effect Week 3 - material defects and their electronic properties Week 4 - crystal growth technique Week 5 - crystal doping technique Week 6 - zone process Week 7 - epitaxy theory Week 8 - MBE, VPE(1/2) Week 9 - midterm report Week 10 - VPE (2/2), LPE Week 11 - film deposition Week 12 - film characteristics (1/2) Week 13 - film characteristics (2/2) Week 14 - diffusion (1/2) Week 15 - diffusion (2/2) Week 16 - implantation (1/2) Week 17 - implantation (2/2) Week 18 - final exam

Evaluation and grading policy midterm report 40% final exam 40% homework and regular assessment 20%

Materials All right reserved. Do not reproduce without permission.

Foreign-language textbooks:Yes
1. Sorab K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Wiley Interscience. 2. V. Swaminathan and A. T. Macrander, Materials Aspects of GaAs and InP Base Structure, Prentice Hall. 3. Ralph Williams, Modern GaAs Processing Methods, Artech House

The access to curricular consultation Email: f10939@ntut.edu.tw
Office hour: Monday: 2:00 pm -6:00 pm

The course corresponds to the SDGs SDG9：產業創新與基礎設施（Industry, Innovation and Infrastructure）

Does the course incorporate AI AI2：鼓勵學生使用生成式AI工具（Encourage students to use generative AI tools）

Note
　

Instructor	Wang,tzyy-jiann　Office Hours
Email	f10939@ntut.edu.tw
Last Updated	2025-05-26 16:00:47
Course Objective	Material properties (Si and GaAs), Crystal growth, Crystal Doping, Epitaxy (MBE, VPE, LPE), Film deposition (thermal evaporation, e-gun, sputtering), Thermal diffusion, Ion implantation
Course Schedule	Week 1 - course introduction Week 2 - material properties (Si and GaAs): crystal structure, orientation effect Week 3 - material defects and their electronic properties Week 4 - crystal growth technique Week 5 - crystal doping technique Week 6 - zone process Week 7 - epitaxy theory Week 8 - MBE, VPE(1/2) Week 9 - midterm report Week 10 - VPE (2/2), LPE Week 11 - film deposition Week 12 - film characteristics (1/2) Week 13 - film characteristics (2/2) Week 14 - diffusion (1/2) Week 15 - diffusion (2/2) Week 16 - implantation (1/2) Week 17 - implantation (2/2) Week 18 - final exam
Evaluation and grading policy	midterm report 40% final exam 40% homework and regular assessment 20%
Materials	All right reserved. Do not reproduce without permission. Foreign-language textbooks:Yes 1. Sorab K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Wiley Interscience. 2. V. Swaminathan and A. T. Macrander, Materials Aspects of GaAs and InP Base Structure, Prentice Hall. 3. Ralph Williams, Modern GaAs Processing Methods, Artech House
The access to curricular consultation	Email: f10939@ntut.edu.tw Office hour: Monday: 2:00 pm -6:00 pm
The course corresponds to the SDGs	SDG9：產業創新與基礎設施（Industry, Innovation and Infrastructure）
Does the course incorporate AI	AI2：鼓勵學生使用生成式AI工具（Encourage students to use generative AI tools）
Note