Course Syllabus

Course Information：

Year-Semester Course Number Course Name Phase Credits Hours Required/Elective Instructor Class Student NO. Withdraw Note

Spring Semester
Year 2026 359231 Silicon Nanometer Devices and Physics 1 3.0 3 ★ Hsiao-Hsuan HSU 4MMRE4A 9 0 EMI

Year-Semester	Course Number	Course Name	Phase	Credits	Hours	Required/Elective	Instructor	Class	Student NO.	Withdraw	Note
Spring Semester Year 2026	359231	Silicon Nanometer Devices and Physics	1	3.0	3	★	Hsiao-Hsuan HSU	4MMRE4A	9	0	EMI

Course Plan：

Instructor Hsiao-Hsuan HSU　Office Hours

Email hhhsu@mail.ntut.edu.tw

Last Updated 2025-12-08 14:31:56

Course Objective 本課程介紹現代矽奈米之元件物理與其操作原理，課程主題涵蓋金屬/半導體接面、能帶圖、金氧半電容元件、金氧半場效電晶體、金氧半場效電晶體之微縮、先進金氧半場效電晶體與其製程技術。 This course provides an introduction to the fundamental physics and operation principles of silicon-based nano devices in modern electronics. This class will cover topics include metal/semiconductor junctions, energy band diagrams, MOS capacitors, MOS field-effect transistors (MOSFETs). MOSFET scaling, modern MOSFETs, and future transistor technologies will also be discussed.(Course taught in English)

Course Schedule 1. P-N junction and P-N diode 2.Metal-Semiconductor Contacts and Schottky Diodes 3. MOS Capacitors 4. Fundamentals of MOSFET 5. Nonideal MOS 6. MOSFETs in ICs--scaling, leakage, and other topics 7. Modern FET devices and Semiconductor Processing

Evaluation and grading policy Midterm Exam: 40% Final Exam: 40 % Class Participation: 20% (Homework, Classwork, Attendance)

Materials All right reserved. Do not reproduce without permission.

Foreign-language textbooks:Yes
1.Fundamentals of Modern VLSI Devices, Yuan Taur and TaK H. Ning, ISBN：9781107635715 2.Semiconductor Physics and Devices:Basic Principles, 4e, Donald A. Neamen, ISBN：9780073529585 3.Lecture notes/handouts

The access to curricular consultation Contact email: hhhsu@mail.ntut.edu.tw

The course corresponds to the SDGs SDG9：產業創新與基礎設施（Industry, Innovation and Infrastructure）

Does the course incorporate AI ● 無（None）

Note
　

Instructor	Hsiao-Hsuan HSU　Office Hours
Email	hhhsu@mail.ntut.edu.tw
Last Updated	2025-12-08 14:31:56
Course Objective	本課程介紹現代矽奈米之元件物理與其操作原理，課程主題涵蓋金屬/半導體接面、能帶圖、金氧半電容元件、金氧半場效電晶體、金氧半場效電晶體之微縮、先進金氧半場效電晶體與其製程技術。 This course provides an introduction to the fundamental physics and operation principles of silicon-based nano devices in modern electronics. This class will cover topics include metal/semiconductor junctions, energy band diagrams, MOS capacitors, MOS field-effect transistors (MOSFETs). MOSFET scaling, modern MOSFETs, and future transistor technologies will also be discussed.(Course taught in English)
Course Schedule	1. P-N junction and P-N diode 2.Metal-Semiconductor Contacts and Schottky Diodes 3. MOS Capacitors 4. Fundamentals of MOSFET 5. Nonideal MOS 6. MOSFETs in ICs--scaling, leakage, and other topics 7. Modern FET devices and Semiconductor Processing
Evaluation and grading policy	Midterm Exam: 40% Final Exam: 40 % Class Participation: 20% (Homework, Classwork, Attendance)
Materials	All right reserved. Do not reproduce without permission. Foreign-language textbooks:Yes 1.Fundamentals of Modern VLSI Devices, Yuan Taur and TaK H. Ning, ISBN：9781107635715 2.Semiconductor Physics and Devices:Basic Principles, 4e, Donald A. Neamen, ISBN：9780073529585 3.Lecture notes/handouts
The access to curricular consultation	Contact email: hhhsu@mail.ntut.edu.tw
The course corresponds to the SDGs	SDG9：產業創新與基礎設施（Industry, Innovation and Infrastructure）
Does the course incorporate AI	● 無（None）
Note