Course Syllabus

Course Information：

Year-Semester Course Number Course Name Phase Credits Hours Required/Elective Instructor Class Student NO. Withdraw Note

Spring Semester
Year 2025 345137 Silicon Nanometer Devices and Physics 1 3.0 3 ★ Hsiao-Hsuan HSU GMMR
半導體學位學程 46 2 EMI

Year-Semester	Course Number	Course Name	Phase	Credits	Hours	Required/Elective	Instructor	Class	Student NO.	Withdraw	Note
Spring Semester Year 2025	345137	Silicon Nanometer Devices and Physics	1	3.0	3	★	Hsiao-Hsuan HSU	GMMR 半導體學位學程	46	2	EMI

Course Plan：

Instructor Hsiao-Hsuan HSU　Office Hours

Email hhhsu@mail.ntut.edu.tw

Last Updated 2024-12-16 23:10:57

Course Objective 本課程介紹現代矽奈米之元件物理與其操作原理，課程主題涵蓋金屬/半導體接面、能帶圖、金氧半電容元件、金氧半場效電晶體、金氧半場效電晶體之微縮、先進金氧半場效電晶體與其製程技術。 This course provides an introduction to the fundamental physics and operation principles of silicon-based nano devices in modern electronics. This class will cover topics include metal/semiconductor junctions, energy band diagrams, MOS capacitors, MOS field-effect transistors (MOSFETs). MOSFET scaling, modern MOSFETs, and future transistor technologies will also be discussed.(Course taught in English)

Course Schedule 1. P-N junction and P-N diode 2.Metal-Semiconductor Contacts and Schottky Diodes 3. MOS Capacitors 4. Fundamentals of MOSFET 5. Nonideal MOS 6. MOSFETs in ICs--scaling, leakage, and other topics 7. Modern FET devices and Semiconductor Processing

Evaluation and grading policy Midterm Exam: 40% Final Exam: 40 % Class Participation: 20% (Homework, Classwork, Attendance)

Materials All right reserved. Do not reproduce without permission.

Foreign-language textbooks:Yes
1.Fundamentals of Modern VLSI Devices, Yuan Taur and TaK H. Ning, ISBN：9781107635715 2.Semiconductor Physics and Devices:Basic Principles, 4e, Donald A. Neamen, ISBN：9780073529585 3.Lecture notes/handouts

The access to curricular consultation Contact email: hhhsu@mail.ntut.edu.tw

The course corresponds to the SDGs SDG9：產業創新與基礎設施（Industry, Innovation and Infrastructure）

Does the course incorporate AI

Note
1. Classes are given virtually via Microsoft Teams if an epidemic happens. 使用 Microsoft Team 提供之課程連結 (學號@cc.ntut.edu.tw，密碼同nportal入口網頁密碼。)

Instructor	Hsiao-Hsuan HSU　Office Hours
Email	hhhsu@mail.ntut.edu.tw
Last Updated	2024-12-16 23:10:57
Course Objective	本課程介紹現代矽奈米之元件物理與其操作原理，課程主題涵蓋金屬/半導體接面、能帶圖、金氧半電容元件、金氧半場效電晶體、金氧半場效電晶體之微縮、先進金氧半場效電晶體與其製程技術。 This course provides an introduction to the fundamental physics and operation principles of silicon-based nano devices in modern electronics. This class will cover topics include metal/semiconductor junctions, energy band diagrams, MOS capacitors, MOS field-effect transistors (MOSFETs). MOSFET scaling, modern MOSFETs, and future transistor technologies will also be discussed.(Course taught in English)
Course Schedule	1. P-N junction and P-N diode 2.Metal-Semiconductor Contacts and Schottky Diodes 3. MOS Capacitors 4. Fundamentals of MOSFET 5. Nonideal MOS 6. MOSFETs in ICs--scaling, leakage, and other topics 7. Modern FET devices and Semiconductor Processing
Evaluation and grading policy	Midterm Exam: 40% Final Exam: 40 % Class Participation: 20% (Homework, Classwork, Attendance)
Materials	All right reserved. Do not reproduce without permission. Foreign-language textbooks:Yes 1.Fundamentals of Modern VLSI Devices, Yuan Taur and TaK H. Ning, ISBN：9781107635715 2.Semiconductor Physics and Devices:Basic Principles, 4e, Donald A. Neamen, ISBN：9780073529585 3.Lecture notes/handouts
The access to curricular consultation	Contact email: hhhsu@mail.ntut.edu.tw
The course corresponds to the SDGs	SDG9：產業創新與基礎設施（Industry, Innovation and Infrastructure）
Does the course incorporate AI
Note	1. Classes are given virtually via Microsoft Teams if an epidemic happens. 使用 Microsoft Team 提供之課程連結 (學號@cc.ntut.edu.tw，密碼同nportal入口網頁密碼。)