教學大綱與進度

課程基本資料：

學年期	課號	課程名稱	階段	學分	時數	修	教師	班級	人	撤	備註
101-2	173615	CMOS元件量測與可靠度工程	1	3.0	3	★	王木俊	機電所	11	0

教學大綱與進度：

教師姓名	王木俊
Email	mucwang@must.edu.tw
最後更新時間	2013-01-22 09:51:07
課程大綱	Through this course, we expect and culture that the graduate students can figure out the MOS device characteristics and measurement technique following submicron and nano-node Si processes. The related process variation impacting the device performance will be delicately probed. Additionally, the device and product reliability in test items and analysis skill is mainly focused, too.
課程進度	Week Outline content 01 Introduction 02 Semiconductor materials 03 Quantum effect 04 Passive devices 05 Characteristics of passive devices 06 Active devices 07 Characteristics of active devices 08 Parameters of active devices 09 Mid-term exam. 10 Pattern designs 11 Pattern designs 12 Parameter extraction 13 Parameter extraction (including charge pumping) 14 Oxide reliability analysis 15 Hot carrier effect 16 Metal migration analysis 17 Product reliability analysis (including ESD) 18 Final exam
評量方式與標準	Grading: 1. Midterm Exam.: 20% 2. Final Exam: 30% 3. Quiz: 50%
使用教材、參考書目或其他	【遵守智慧財產權觀念，請使用正版教科書，不得使用非法影印教科書】 使用外文原文書：　 Textbook: Self-lecture and published papers. References: 1. VLSI Technology by S.M. Sze 2. Modern Semiconductor Device Physics by S.M. Sze 3. Semiconductor Devices Physics and Technology 2nd by S.M. Sze 4. ULSI Technology by C.Y. Chang and S.M. Sze; 5. ULSI Devices by C.Y. Chang and S.M. Sze; 6. Device Electronics for Integrated Circuits by R. S. Muller; 7. Solid State Electronic Devices 6th by Ben G. Streetman; 8. Modern Semiconductor Devices for Integrated Circuits by Chenming Hu 9. MOSFET Modeling with SPICE by Daniel Foty 10. Introduction to Semiconductor Manufacturing Technology by H. Xiao 11. MOSFET Modeling with SPICE by Daniel Foty 12. Published papers
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